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hexfet ? power mosfet hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. this benefit, combined with the ruggedized device design, that interna- tional rectifier is well known for, provides the designer with an extremely efficient and reliable device for battery and load management. the tssop-8 package has 45% less footprint area than the standard so-8. this makes the tssop-8 an ideal device for applications where printed circuit board space is at a premium. the low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and pcmcia cards. IRF7750PBF description ultra low on-resistance dual p-channel mosfet very small soic package low profile ( < 1.1mm) available in tape & reel lead-free parameter max. units v ds drain- source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -4.5v 4.7 i d @ t a = 70c continuous drain current, v gs @ -4.5v 3.8 a i dm pulsed drain current 38 p d @t a = 25c power dissipation 1.0 p d @t a = 70c power dissipation 0.64 linear derating factor 0.008 w/c v gs gate-to-source voltage 12 v t j, t stg junction and storage temperature range -55 to + 150 c parameter max. units r ja maximum junction-to-ambient 125 c/w thermal resistance absolute maximum ratings www.irf.com 1 05/14/09 tssop-8

v dss = -20v r ds(on) = 0.030 ? pd-96019a
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 300s; duty cycle parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source curre nt integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.0a, v gs = 0v t rr reverse recovery time ??? 26 39 ns t j = 25c, i f = -1.0a q rr reverse recoverycharge ??? 16 24 nc di/dt = 100a/s source-drain ratings and characteristics -38 -1.0 when mounted on 1 inch square copper board, t<10 sec parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.012 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.030 v gs = -4.5v, i d = -4.7a ??? 0.055 v gs = -2.5v, i d = -3.8a v gs(th) gate threshold voltage -0.45 ??? -1.2 v v ds = v gs , i d = -250a g fs forward transconductance 11 ??? ??? s v ds = -10v, i d = -4.7a ??? ??? -1.0 v ds = -20v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 70c gate-to-source forward leakage ??? ??? -100 v gs = -12v gate-to-source reverse leakage ??? ??? 100 v gs = 12v q g total gate charge ??? 26 39 i d = -4.7a q gs gate-to-source charge ??? 3.9 5.8 nc v ds = -16v q gd gate-to-drain ("miller") charge ??? 8.0 12 v gs = -5.0v t d(on) turn-on delay time ??? 15 ??? v dd = -10v t r rise time ??? 54 ??? i d = -1.0a t d(off) turn-off delay time ??? 180 ??? r d = 10 ? t f fall time ??? 210 ??? r g = 24 ? c iss input capacitance ??? 1700 ??? v gs = 0v c oss output capacitance ??? 380 ??? pf v ds = -15v c rss reverse transfer capacitance ??? 270 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) a ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current na ns s d g
www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -7.50v -5.00v -4.00v -3.50v -3.00v -2.50v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 1 10 100 1.5 2.0 2.5 3.0 v = -15v 20s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. threshold voltage vs. temperature 1 10 100 0 500 1000 1500 2000 2500 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.7a v = -16v ds -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.20 0.40 0.60 0.80 1.00 - v g s ( t h ) , v a r i a c e ( v ) i d = -250a 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature typical power vs. time 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 0.01 0.10 1.00 10.00 100.00 time (sec) 0 4 8 12 16 20 p o w e r ( w )
6 www.irf.com fig 13. typical on-resistance vs. drain current fig 14. typical on-resistance vs. gate voltage fig 12. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -4.7a 0 10203040 -i d , drain current (a) 0.00 0.02 0.04 0.06 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = -2.5v v gs = -4.5v 2.0 2.5 3.0 3.5 -v gs, gate -to -source voltage (v) 0.00 0.02 0.04 0.06 0.08 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = -4.7a
www.irf.com 7 note: for the most current drawing please refer to ir website at http://www.irf.com/package/

!!! " " " " tssop8 package outline dimensions are shown in milimeters (inches)

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8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/2009

tssop-8 tape and reel information

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